Pattern inspection method and apparatus

ABSTRACT

A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects, while masking a region pre-registered in terms of coordinates, or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to determine whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned on/off, or they are so displayed as to be distinguishable from the other defects.

BACKGROUND OF THE INVENTION

The present invention relates to a method and apparatus for fabricatingsubstrates having circuit patterns, such as semiconductor devices andliquid crystal display devices, and, more particularly, to a techniquefor inspecting substrate patterns in a fabrication process.

Conventional optical or electron-beam pattern inspection apparatuseshave been proposed in JP-A Nos. H5(1993)-258703, H11(1999)-160247,S61(1986)-278706, H7(1995)-5116, H2(1990)-146682, H9(1997)-312318, andH3 (1991)-85742, for example.

FIG. 1 shows an example of an electron-beam pattern inspection apparatusof the type disclosed in JP-A No. H5(1993)-258703. In this conventionalelectron-beam pattern inspection apparatus, an electron beam 2 emittedfrom an electron source 1 is deflected in the X direction by a deflector3, and the electron beam 2 thus deflected impinges on an objectsubstrate 5 under test after passing through an objective lens 4.Simultaneously, while a stage 6 is moved continuously in the Ydirection, secondary electrons 7 or the like produced from the objectsubstrate 5 are detected by a detector 8. Thus, a detected analog signalis output from the detector 8. Then, through an A/D converter 9, thedetected analog signal is converted into a digital image. In an imageprocessor circuit 10, the digital image thus produced is compared with areference digital image which is expected to be identical thereto. Ifany difference is found, the difference is judged to be a pattern defect11, and the location thereof is determined.

FIG. 2 shows an example of an optical pattern inspection apparatus ofthe type in JP-A No. H11 (1999)-160247. In this conventional opticalinspection apparatus, a light beam emitted from a light source 21 isapplied to an object substrate 5 under test through an objective lens22, and light reflected from the object substrate 5 is detected by animage sensor 23. While a stage 6 is moved at a constant speed, detectionof reflected light is repeated to produce a detected image 24. Thedetected image 24 thus produced is stored into a memory 25. In an imageprocessing circuit 10, the detected image 24 is compared with apreviously memorized reference image 27, which is expected to have apattern identical to that of the detected image 24. If the pattern ofthe detected image is identical to that of the reference image 27, it isjudged that there is no defect, on the object substrate 5. If thesepatterns are not identical to each other, a pattern defect 11 isrecognized, and the location thereof is determined.

As an example, FIG. 3 shows a layout of a wafer 31 corresponding to theobject substrate 5. On the wafer 31, there are formed dies 32 which areto be separated eventually as individual identical products. The stage 6is moved along a scanning line 33 to detect images in a stripe region34. In a situation where a detection position A 35 is currently taken, apattern image attained at the detection position A 35 is compared with apattern image attained at a detection position B 36 (reference patternimage 27), which has been stored in the memory 25. Thus, each patternimage is compared with a reference pattern image which is expected to beidentical thereto. In this arrangement, the memory 25 has a storagecapacity sufficient for retaining reference pattern image data to beused for comparison, and the circuit structure of the memory 25 isdesigned to perform a circular-shift memory operation.

In the following two examples, a defect check is conducted using abinary image of an object under test. In synchronization with patterndetection, a judgment is formed on whether a pattern of the object isdefective or not while ignoring a possible defect in a particular maskregion.

In JP-A No. S61 (1986)-278706, there is disclosed an example of atechnique for inspecting through-holes on a printed circuit board. Inthis inspection technique, a printed circuit board having through-holesonly in a non-inspection region thereof is prepared beforehand, and animage of the printed circuit board is taken prior to inspection. Abinary image indicating the presence/absence of through-holes is thusattained for masking, and it is stored as image data in a masking datastorage. At the time of inspection, if a difference found in binaryimage comparison is located at a position included in a mask regionstored in the masking data storage, the difference is ignored fornon-inspection.

In JP-A No. H7(1995)-5116, there is disclosed an example of a techniquefor printed circuit board inspection. In this inspection technique, apattern is detected to provide binary image data, and using the binaryimage data, a judgment is formed on whether the detected pattern isnormal or not; more specifically, it is checked to determine whether thedetected pattern meets any specified regular pattern or not. If not, thedetected pattern is judged to be defective.

In the following two examples, using pattern data, a dead zone isprovided for the purpose of allowing an error at a pattern boundary ininspection.

In JP-A No. H2(1990)-146682, there is disclosed an example of aninspection technique in which a mask pattern is compared with designdata. Through calculation of design data, a pattern is reduced by apredetermined width to attain a reduced image, and also the pattern, isenlarged by a predetermined width to attain an enlarged image. Then, apart common to the reduced image and the enlarged image is extracted toprovide a dead zone having a certain width. Thus, using the design data,a mask region is provided so that an error at a pattern boundary havinga certain width will be ignored during inspection.

In JP-A No. H9(1997)-312318, there is disclosed an example of atechnique for inspecting patterns using a scanning electron microscope(hereinafter referred to just as a “SEM”). Using a reference imageacquired in advance, a vicinal area of a pattern edge is set up as aregion where no critical defect occurs, since a minuscule deviation of apattern edge is not regarded as a defect. Thus, an image of the regionwhere no critical defect occurs is ignored. If any difference is foundbetween the reference image and an image of a pattern under test,excluding the region where no critical defect occurs, the difference isjudged to be a pattern defect.

In JP-A. No. H3(1991)-85742, there is disclosed an example of a systemfor carrying out comparative inspection of printed circuit patterns. Animage of a candidate defect attained in comparative inspection, isstored in memory. Then, not simultaneously with the comparativeinspection, the memorized image is examined to judge whether adifference is actually a defect or not.

On an object under test, there is an area where a considerabledifference is found in comparative inspection of patterns, even if thedifference is not actually a defect. For example, on an ion-implantedregion for formation of a transistor, a non-defective difference may befound in comparative inspection of patterns. Although a differencebetween a part where ions have been implanted and a part where ions havenot been implanted is important at a location of a transistor element,the characteristics of wiring areas, other than transistor elementlocations, are not affected by the presence/absence of implanted ions.Therefore, in an ion implantation process, rough masking is used todetermine where ions are to be implanted. However, in electron-beaminspection of wiring areas, a considerable difference attributable towhether implanted ions are present or not may be detected, resulting ina wrong judgment indicating that the difference represents a defect.

Further, for example, in a power line layer where redundant wiring isprovided, even if a part of the wiring is not connected, circuitnormality can be ensured by providing a connection at another point.Therefore, in some cases, rough patterning is provided for a powerwiring arrangement, so that no-connection on pattern elements are left.In comparative inspection of detected images, a difference attributableto whether a connection is provided or not nay be found, resulting in awrong judgment indicating that the difference represents a defect.

Still further, for example, on a pattern edge, a detected signal levelvaries depending on the thickness/inclination of a film thereof.Although up to a certain degree of variation in detected signal outputmay be ignored, a considerable difference in detected signal output islikely to be taken as a defect mistakenly. A degree of false defectdetection is however applicable as an index representing productquality. It is desirable to examine the degree of false defect detectionand preclude false defects before carrying out defect inspection.

In the conventional optical/electron-beam pattern inspection apparatusesdisclosed in JP-A Nos. H5(1993)-258703 and H11 (1999)-160247, it is notallowed to set up a non-inspection region.

In the inspection techniques disclosed in JP-A Nos. S61 (1986)-278706and H7 (1995)-5116, there is provided a non-inspection region. However,according to an example presented in JP-A No. S61(1986)-278706, it isrequired to specify a non-inspection region covering a very large areaby using a bit pattern. In application to wafer inspection, a wafersurface area 300 mm in diameter has to be inspected using pixels eachhaving a size of 0.1 μm. This requires an impractically large number ofpixels, i.e., seven tera-pixels (seven terabits). According to theinspection technique disclosed in JP-A No. H7 (1995)-5116, any areasother than regular pattern areas are treated as non-inspection regions.Since very complex patterns are formed on a wafer, a non-inspectionregion cannot be set up just by means of simple pattern regularity.

In the inspection techniques disclosed in JP-A Nos. H2 (1990)-146682 andH9 (1997)-312318, the use of a non-inspection region is limited to apattern edge, and therefore it is not allowed to set up a non-inspectionregion at an arbitrary desired location.

In the inspection system disclosed in JP-A No. H3 (1991)-85742, imagedata of a candidate defect is stored, and then detail inspection iscarried out using the stored image data to check whether a difference isactually a defect or not. This approach is applicable to inspection ofcomplex pattern geometries. However, based on predetermined criteria, ajudgment is formed on whether a difference is actually a defect or not.Any part may be judged to be normal if requirements based onpredetermined criteria are satisfied. That is to say, once a part isjudged to be normal, data regarding the part will be lost.

As described above, in the conventional pattern inspection techniques,it is not allowed for a user to set up a non-inspection region effectivefor a device having a complex, large pattern area to be inspected, suchas a wafer. Further, in cases where a considerable difference is foundin comparative inspection of detected images even if the difference isnot actually a defect, it is likely to be misjudged that the differencerepresents a defect. In addition to these disadvantages, theconventional pattern inspection techniques are also unsatisfactory asregards stability in detection of minuscule defects.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to overcome theabove-mentioned disadvantages of the prior art by providing a patterninspection method and apparatus for enabling a user to easily set up anon-inspection region effective for a device having a complex, largepattern area to be inspected.

In accomplishing this object of the present invention, and according toone aspect thereof, there is provided a pattern inspection apparatussuch as shown in FIG. 4. While an exemplary configuration of anelectron-beam pattern inspection apparatus is presented here, an opticalpattern inspection apparatus can be configured in the same fashion inprinciple. The electron-beam pattern inspection apparatus shown in FIG.4 comprises an electron source 1 for emitting an electron beam 2, adeflector 3 for deflecting the electron beam 2, an objective lens 4 forconverging the electron beam 2 onto an object substrate 5 under test, astage 6 for holding the object substrate 5 and for scanning/positioningthe object substrate 5, and a detector 8 for detecting secondaryelectrons 7 or the like produced from the object substrate 5 to output adetected analog signal. An A/D converter 9 converts the detected analogsignal into a digital image, and an image processor circuit 10 comparesthe converted digital image with a reference digital image expected tobe identical thereto and identifies a difference found in comparison asa candidate defect 40. A candidate defect memory part 41 is provided forstoring feature quantity data of each candidate defect 40, such ascoordinate data, projection length data and shape data, and a masksetting part 44 examines pattern defects 11 stored in the candidatedefect memory part 41 and flags a candidate defect located in a maskregion 42 (shown in FIG. 5), prespecified with coordinates, as a maskeddefect 43 (shown in FIG. 5). An operation display 45 is provided onwhich data of pattern defects 11 received from the mask setting part 44is displayed, an image of a selected pattern defect 11 is displayed, andthe mask region 42 is displayed or edited.

The operations in the electron-beam pattern inspection apparatus,configured as mentioned above, will be described. Referring now to FIG.5, the mask region 42 will be described first.

On the object, substrate 5, there is an area where a considerabledifference is found in comparative inspection of patterns, even if thedifference is not actually a defect, such as a region 50 where ions havebeen implanted. In actual practice, during ion implantation, ions arelikely to be implanted in a deviated fashion, i.e., a deviatedion-implanted part 52 is formed in addition to normal ion-implantedpattern parts 51. The deviated ion-implanted part 52 has no adverseeffect on device characteristics, i.e., the deviated ion-implanted part52 should be judged to be non-defective. However, the deviatedion-implanted part 52 is detected as a pattern defect 11. Therefore, anarea including the ion-implanted region 50 is set up as a mask region42, and a possible defect in the mask region 42 is treated as a maskeddefect 43. Since the same die pattern is formed repetitively on thewafer 31 shown in FIG. 3, on-die coordinates are used in regionrecognition. Parts, having the sane coordinates on different dies areregarded as identical, and if in-die coordinates of a part are includedin a specified region, it is regarded that the part is included in thespecified region. For the wafer 31, beam shots are also characterized byrepetitiveness besides dies. Each shot is a unit of beam exposure in apattern exposure system used for semiconductor device fabrication. Foridentifying some kinds of false defects to be precluded in patterninspection, the use of shots may be more suitable than that of dies withrespect to pattern repetitiveness. Although the following descriptionhandles dies, it will be obvious to those skilled in the art that shotsare applicable in lieu of dies and that an arrangement may be providedfor allowing a changeover between shots dies.

Operations in the electron-beam pattern inspection apparatus accordingto the present invention include a conditioning operation in which themask region 42 is defined and an inspection operation in which anycandidate defect 40 detected in other than the mask region 42 is judgedto be a pattern defect.

In the conditioning operation, the mask region 42 is cleared, theelectron beam 2 emitted from the electron source 1 is deflected in the Xdirection by the deflector 3, and the electron beam 2 thus deflected isapplied to the object substrate 5 through the objective lens 4.Simultaneously, while the stage 6 is moved continuously in the Ydirection, secondary electrons 7 or the like produced from the objectsubstrate 5 are detected by the detector 8. Thus, a detected analogsignal is output from the detector 8. Then, through the A/D converter 9,the detected analog signal is converted into a digital image. In theimage processor circuit 10, the digital image thus produced is comparedwith a reference digital image which is expected to be identicalthereto. If any difference is found in comparison, the difference isindicated as a candidate defect 40. Feature quantity data of eachcandidate defect 40, such as coordinate data, projection length data andshape data (image data), is stored into the candidate defect memory part41. In the mask setting part 44, pattern defects 11 are set usingfeature quantity data of respective candidate defects 40. The patterndefects 11 are superimposed on an image of the object substrate 5, andthe resultant image is presented on a map display part 55 of anoperation display 45 (screen), as shown in FIG. 6. The user can selectany one of the pattern defects 11 (including true defects 57 and, falsedefects 58 not to be detected, in FIG. 6) on the map display part 55 ofthe operation display 45. An image of a pattern defect 11 selected onthe map display part 55 is presented on an image display part 56 of theoperation display 45. By checking the image of each of the patterndefects 11 on the image display part 56, the user classifies the patterndefects 11 into true defects 57 and false defects 58 not to be detected.The results of this classification are indicated as particular symbolson the map display part 55.

After completion of the defect classification mentioned above, the userselects an operation display screen shown in FIG. 7, which comprises amap display part 55 for presenting an enlarged map including truedefects 57, false defects 58 not to be detected and a current positionindicator 59, and an image display part 56 for presenting an imagecorresponding to the current position indicator 59. On the map displaypart 55, the user can specify a mask region 42 and check a position ofeach pattern defect 11. With reference to classification information oneach pattern defect 11 and the image corresponding to the currentposition indicator 59, the user sets up coordinates of a mask region 42so that the false defects 58 will not be detected. As required, the usercarries out the conditioning operation again to set up the coordinatesof the mask region 42 more accurately.

In the inspection operation, the electron beam 2 emitted from theelectron source 1 is deflected in the X direction by the deflector 3,and the electron beam 2 thus deflected is applied to the objectsubstrate 5 through the objective lens 4. Simultaneously, while thestage 6 is moved continuously in the Y direction, secondary electrons 7or the like produced from the object substrate 5 are detected by thedetector 8. Thus, a detected analog signal is output from the detector8. Then, through the A/D converter 9, the detected analog signal isconverted into a digital image. In the image processor circuit 10, thedigital image thus produced is compared with a reference digital imagewhich is expected to be identical thereto. If any difference is found incomparison, the difference is indicated as a candidate defect 40.Feature quantity data of each candidate defect 40, such as coordinatedata, projection length data and shape data (image data), is stored intothe candidate defect memory part 41. The feature quantity data of eachcandidate defect 40 is examined to judge whether the candidate defect 40is located in the specified mask region 42 or not. If it is determinedthat the candidate defect 40 is not located in the specified mask region42, the candidate defect 40 is defined as a pattern defect 11. Then, thepattern defect 11 is superimposed on an image of the object substrate 5,and the resultant image is presented on the map display part 55. Even ifthe candidate defect 40 is not defined as a pattern defect 11, thefeature quantity data thereof is retained so that it can be displayedagain. This makes it possible for the user to avoid forming a wrongjudgment that a considerable non-defective difference is a defect.

In the above-mentioned arrangement of the present invention, the masksetting part 44 is used for determining a false defect not to bedetected. While coordinates are used in the mask setting part 44 asexemplified above, any other pattern data or feature quantity data ofeach candidate defect image is also applicable for identification. On apattern edge, a degree of variation in detected signal out put dues notdepend on, coordinates, and therefore pattern-edge feature quantity datais used for identification instead of coordinate data.

Further, while masking is made for non-inspection of candidate defects,as exemplified above, another inspection means, or a method ofinspection based on another criterion is also applicable to examinationof an area corresponding to a mask region. In this case, according toconditions specified by the user after inspection, a defect judgment canbe formed again regarding candidate defects 40 stored in the candidatedefect memory part 41.

As described above, and according to the present invention, the user canset up a non-inspection region which is effective for a device having acomplex, large pattern area to be inspected, such as a wafer. Further,in cases where a considerable difference is found in comparativeinspection of detected images, even if the difference is not actually adefect, the present invention makes it possible to avoid false defectdetection while carrying out detection of minuscule defects.

These and other objects, features and advantages of the invention willbe apparent from the following mere particular description of preferredembodiments of the invention, as illustrated in the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a conventional electron-beam patterninspection apparatus;

FIG. 2 is a schematic diagram of a conventional optical patterninspection apparatus;

FIG. 3 is a plan view showing a layout of a wafer;

FIG. 4 is a schematic diagram of an electron-beam pattern inspectionapparatus, showing an arrangement of first problem-solving meansaccording to the present invention;

FIG. 5 is a diagrammatic plan view illustrating operation of the firstproblem-solving means according to the present invention;

FIG. 6 is a diagram showing the layout of a defect check screen;

FIG. 7 is a diagram showing the layout of a mask region setting screen;

FIG. 8 is a schematic diagram showing the configuration of anelectron-beam pattern inspection apparatus in a first preferredembodiment of the present invention;

FIG. 9 is a diagram showing a startup screen in the first preferredembodiment of the present invention;

FIG. 10 is a diagram showing a contrast adjustment screen for recipecreation in the first preferred embodiment of the present invention;

FIG. 11 is a diagram showing a trial inspection initial screen forrecipe creation in the first preferred embodiment of the presentinvention;

FIG. 12 is a plan view of a wafer, showing a scanning sequence in thefirst preferred embodiment of the present invention;

FIG. 13 is a diagran showing a trial inspection defect check screen forrecipe creation in the first preferred embodiment of the presentinvention;

FIG. 14 is a diagram showing a mask region setting screen for recipecreation in the first preferred embodiment of the present invention;

FIG. 15 is a diagram showing an inspection defect check screen in thefirst preferred embodiment of the present invention;

FIG. 16 is a schematic diagram showing the configuration of anelectron-beam pattern inspection apparatus in a second preferredembodiment of the present invention;

FIG. 17 is a diagran showing an image processing region setting screenfor recipe creation in the second preferred embodiment of the presentinvention;

FIG. 18 is a schematic diagram showing the configuration of anelectron-beam pattern inspection apparatus in a third preferredembodiment of the present invention;

FIG. 19 is a diagran showing a defect check screen for recipe creationin the third preferred embodiment of the present invention; and

FIG. 20 is a diagram showing an image processing feature quantity datasetup screen for recipe creation in the third preferred embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described in detail by way of examplewith reference to the accompanying drawings.

Embodiment 1

A first preferred embodiment of the present invention will be described.FIG. 8 shows the configuration of an electron-beam pattern inspectionapparatus according to the first preferred embodiment of the presentinvention. The electron-beam pattern inspection apparatus comprises anelectron optical system 106, including: an electron source 1 foremitting an electron beam 2 from an electron gun in which the electronbeam 2 from the electron source 1 is extracted and accelerated by anelectrode to produce a virtual electron source at a predetermined pointthrough an electrostatic or magnetic field superimposing lens; acondenser lens 60 for converging the electron beam 2 from the virtualelectron source at a predetermined convergence point; a blanking plate63 which is equipped in the vicinity of the convergence point of theelectron beam 2 for turning on/off the electron beam 2; a deflector 105for deflecting the electron beam 2 in the X and Y directions; and anobjective lens 4 for converging the electron beam 2 onto an objectsubstrate (wafer 31).

Further, the electron-beam pattern inspection apparatus comprises aspecimen chamber 107 in which the object substrate (wafer 31) is held ina vacuum; a stage 6 where the wafer 31 is mounted and to which aretarding voltage 108 is applied for enabling detection of an image atan arbitrary position; and a detector 8 for detecting secondaryelectrons 7 or the like produced from the object substrate to output adetected analog signal. An A/D converter 9 is provided for convertingthe detected analog signal into a digital image, which is stored in amemory 109 for storing digital image data, and an image processorcircuit 10 compares the converted digital image with a reference digitalimage stored in the memory 109 and identifies a difference found incomparison as a candidate defect 40. A candidate defect memory part 41,which stores feature quantity data of each candidate defect 40, such ascoordinate data, projection length data and shape data, is provided in ageneral control part 110, in which the overall apparatus control isconducted, with feature quantity data of each pattern defect 11 beingreceived from the candidate defect memory part 41. A mask region 42(shown in FIG. 5) is set as region data, and a candidate defect locatedin the mask region 42 is flagged as a masked defect 43 (shown. in FIG.5) (control lines from the general control part 110 are not shown inFIG. 8). An operation display 45 is provided on which data of patterndefects 11 is displayed, an image of a selected pattern defect 11 isdisplayed, and the mask region 42 is displayed or edited.

Still further, the electron-beam pattern inspection apparatus comprisesa keyboard, a mouse and a knob (not shown) for operation and control; aZ sensor for measuring the height level of each wafer 31 to maintain afocal point of a detected digital image through control of a currentapplied to the objective lens by adding an offset 112; a loader (notshown) for loading the wafer 31 from its cassette 114 to the specimenchamber 107 and for unloading the wafer 31 from the specimen chamber 107to the cassette 114; an orientation flat detector (not shown) forpositioning the wafer 31 according to the circumferential shape of thewafer 31; an optical microscope 118 for allowing observation of apattern on the wafer 31; and a standard specimen 119, which is set onthe stage 6.

Operations in the first preferred embodiment include a conditioningoperation, in which a mask region 42 is set up, and an inspectionoperation, in which any candidate defect 40 detected in other than themask region 42 is exanined as a pattern defect.

In the conditioning operation, a user opens a startup screen shown inFIG. 9 on the operation display 45. On a slot selection part 130 of thestartup screen, the user selects a code number of a slot where the wafer31 to be inspected is contained. Then, on a recipe selection part 131,the user specifies a product type of the wafer 31 and a process stepthereof, and the user presses a recipe creation start button 132 forstarting the conditioning operation. The conditioning operation includescontrast setting for the electron optical system, pattern layout settingfor the wafer 31, pattern positioning alignment for the wafer 31,calibration in which a signal level of the wafer 31 is checked at aposition where the signal level is indicated accurately, inspectioncondition setting, mask region setting, and a setup condition check intrial inspection. The contrast setting, mask region setting, and trialinspection, which form essential parts of the present invention, will bedescribed.

The general control part 110 provides operational instructions to eachpart in the following manner.

First, the general control part 110 issues an operational instruction tothe loader (not shown) so that the loader takes the wafer 31 out of thecassette 114. Then, through the use of the orientation flat detector(not shown), the circumferential shape of the wafer 31 is checked, andthe wafer 31 is positioned according to the result of this check. Thewafer 31 is then mounted on the stage 6, and the specimen chamber 107 isevacuated. Simultaneously, the electron optical system and the retardingvoltage 108 are conditioned. A voltage is applied to the blanking plate63 to turn off the electron beam 2. The stage 6 is moved so that thestandard specimen 119 can be imaged, and an output of the Z sensor 113is made effective. While a focal point of the electron beam 2 from theelectron optical system is maintained at a position corresponding to “avalue detected by the Z sensor 113+an offset 112”, raster scanning isperformed by the deflector 105. In synchronization with this rasterscanning, the voltage applied to the blanking plate 63 is turned off sothat the wafer 31 is irradiated with the electron beam 2 as required.Backscattered electrons or secondary electrons produced from the wafer31 are detected by the detector 8, which then outputs a detected analogsignal. Through the A/D converter 9, the detected analog signal isconverted into a digital image. By changing the offset 112, a pluralityof digital images are detected, and in the general control part 110, anoptimum offset for maximizing the sun of image differential values isdetermined. The optimum offset thus determined is set up as the currentoffset value.

After the optimum off set is established, the output of the Z sensor 113is made ineffective, and a screen transition is made to the contrastadjustment screen shown in FIG. 10. The contrast adjustment screencomprises: a map display part 55 having a map display area, a button forcontrolling display of the entire wafer or die map, and a mouseoperation command button 140 for controlling position movement or itemselection by the use of the mouse (not shown); an image display part 56,having an image display area and an image changeover button 141 forsetting an image magnification, for selecting an optical micrographimage attained through the optical microscope 118 or a SEM imageattained through the electron optical system, and for specifying a kindof image; a recipe creation item selection button 142; a recipe creationend button 133; and a recipe save button 134. On the contrast adjustmentscreen, the user sets the mouse operation command button 140 to amovement mode, and performs movement on the map by clicking the mouse toview an image at the current position on the image display part. Then,the user assigns an adjustment item of the electron optical system tothe knob, and adjusts each part of the electron optical system to attainproper contrast.

The recipe creation end button 133 is used for terminating recipecreation; the recipe save button 134 is used for saving recipe conditiondata; and the recipe creation item selection button 142 is used forsetting another condition and issuing an instruction for screentransition. These buttons are available on all of the screens. To open atrial inspection initial screen, as shown in FIG. 11, the user sets therecipe creation item selection button 142 to a trial inspection item.

The trial inspection initial screen comprises a map display part 55, arecipe creation end button 133, a recipe save button 134, a recipecreation item selection button 142, an inspection start button 143, andan inspection end bit ton 144. The user sets the mouse operation commandbutton 140 to a selection mode. Then, by clicking a die on the mapdisplay part 55, the user can select/deselect the die for trialinspection. Each die can thus be selected for trial inspection. Afterselecting any die for trial inspection, the user presses the inspectionstart button 143 to start trial inspection. When trial inspection isstarted, the stage 6 is driven for movement to a scanning start positionof the region to be inspected on the wafer 31 mounted thereon. Apre-measured offset value inherent in the wafer 31 is added to theoffset 112, and the Z sensor 113 is made effective. Then, along thescanning line 33 shown in FIG. 3, the stage 6 is scanned in the Ydirection. In synchronization with this stage scanning, the deflector105 is scanned in the X direction. During a period of of fectivescanning, a voltage to the blanking plate 63 is turned off to let theelectron beam 2 fall on the wafer 31 for scanning the surface thereof.Backscattered electrons or secondary electrons produced from the wafer31 are detected by the detector 8, and through the A/D converter 9, adigital image of the stripe region 34 is attained. The digital imagethus attained is stored into the memory 109. After completion of thescanning operation of the stage 6, the Z sensor 113 is made ineffective.The entire region of interest can be inspected by repeating stagescanning. In cases were the entire surface of the wafer 31 is inspected,the scanning sequence shown in FIG. 12 is adopted.

When the detection position A 35 is selected in the image processorcircuit 10, an image attained at the detection position A 35 is comparedwith an image attained at the detection position B 36, which has beenstored in the memory 109. If any difference is found in the comparison,the difference is extracted as a candidate defect 40 to prepare a listof pattern defects 11. The list of pattern defects 11 thus prepared issent to the general control part 110. In the general control part 110,feature quantity data of each pattern defect 11 is taken out of thecandidate defect memory part 41. A pattern defect 11 located in the maskregion 42, which has been registered in a recipe, is flagged as a maskeddefect 43 (feature quantity data thereof is flagged). After completionof inspection of the entire region of interest, the user opens a trialinspection defect check screen shown in FIG. 13.

The trial inspection defect check screen comprises a defect displayediting part 150 for displaying feature quantity data of defects andediting classification thereof, a map display part 55 in which a currentposition indicator 59 indicating the current position and class codesymbols of pattern defects 11 are displayed on a layout of the wafer 31,an image display part 56 in which an image taken at the current positionis displayed, a display changeover button 151 for turning on/off maskeddefects 43, and other buttons which have already been described. Theuser sets the mouse operation command button 140 to the selection mode,and then clicks any pattern defect 11 indicated on the nap display part55. Thus, an image of the pattern defect 11 is presented on the imagedisplay part 56, and feature quantity data thereof is presented on thedefect display editing part 150. On the defect display editing part 150,the pattern defect 11 is subjected to classification according to theimage and feature quantity data thereof, i.e., a class code is assignedto the feature quantity data of the pattern defect 11. At this step, ifit is desired to treat the pattern defect 11 as a masked defect, aparticular class code is assigned thereto. Thus, it can be identified asa masked defect on the map display part 55. After completion of thedefect classification, the user makes a transition to a mask regionsetting screen, as shown in FIG. 14, by using the recipe creation itemselection button, or the user returns to the trial inspection initialscreen by pressing the inspection end button.

The mask region setting screen comprises a map display part 55 in whicha current position indicator 59 indicating the current position, classcode symbols of pattern, defects 11 and a mask region 42 are displayedon a layout of the wafer 31; an image display part 56 in which an imagetaken at the current position is displayed; a display changeover button151 for turning on/off masked defects 43, a new region button 160 forcreating a new mask region; a completion button 161 for indicating theend of creation of a new mask region; and other buttons which havealready described. Note that the map display part 55 presents the entiredie region. The current position indicator 59 and pattern defects 11 inthe entire die region are indicated in representation of on-diecoordinates.

The user sets the mouse operation command button 140 to the movementmode, and then clicks in the vicinity of a class code of any defect tobe masked for making movement thereto. Thus, an image of the defect tobe masked is presented on the image display part 56. If the user judgesthat a mask region should be formed, the user presses the new creationbutton 160 to select a region creation mode. In this mode, the userdefines a mask region by clicking at the upper left corner and the lowerright corner thereof on the image display part. The mask region thusdefined (mask region 42) is indicated on the map display part 55. Aftercreating the mask region, as mentioned above, the user can turn on/offmasked defects 43 by pressing the display changeover button 151 toconfirm the location of the defect to be masked. When the mask region 42is set tp as required, the user presses the recipe save button 134 forsaving data of the mask region 42 in a recipe.

After saving the data of the mask region 42, the user presses thecompletion button 161 to return to the trial inspection defect checkscreen. Further, on the trial inspection defect check screen, the userpresses the inspection end button 144 to return to the trial inspectioninitial screen. Then, it is also possible for the user to select anotherdie for trial inspection. For confirming and terminating theabove-mentioned recipe creation session, the user presses the recipecreation end button 133. Upon completion of the recipe creation, thewafer 31 is unloaded back to the cassette 114.

The following description is directed to the inspection operation inwhich any candidate defect detected in other than the mask region isexamined as a pattern defect. In the inspection operation, the useropens the startup screen shown in FIG. 9 on the operation display 45. Onthe slot selection part 130 of the start tp screen, the user selects acode number of a slot were the wafer 31 to be inspected is contained.Then, on the recipe selection part 131, the user specifies a producttype of the wafer 31 and a process step thereof, and the user pressesthe inspection start button 330 for starting the inspection operation.After wafer loading, alignment and calibration are performed, inspectionprocessing is carried out. Then, defect check and defect data output areperfornad, and wafer unloading is carried out at the end of inspection.The inspection processing and defect check, which form essential partsof the present invention, will now be described.

When the user presses the inspection start button 330 to indicate thestart of inspection, the stage 6 is driven for movement to a scanningstart position of the region to be inspected on the wafer 31 mountedthereon. A pre-measured offset value inherent in the wafer 31 is addedto the offset 112, and the Z sensor 113 is made effective. Then, alongthe scanning line 33 shown in FIG. 3, the stage 6 is scanned in the Ydirection. In synchronization with this stage scanning, the deflector105 is scanned in the X direction. During a period of effectivescanning, a voltage to the blanking plate 63 is turhed off to let theelectron beam 2 fall on the wafer 31 for scanning the surface thereof.Backscattered electrons or secondary electrons produced from the wafer31 are detected by the detector 8, and through the A/D converter 9, adigital image of the stripe region 34 is attained. The digital imagethus attained is stored into the memory 109. After completion of thescanning operation of the stage 6, the Z sensor 113 is made ineffective.The entire region of interest can be inspected by repeating stagescanning. In cases where the entire surface of the wafer 31 isinspected, the scanning sequence shown in FIG. 12 is adopted.

When the detection position A 35 is selected in the image processorcircuit 10, an image attained at the detection position A 35 is ccnparedwith an image attained at the detection position B 36, which has beenstored in the memory 109. If any difference is fonnd in comparison, thedifference is extracted as a candidate defect 40 to prepare a list ofpattern defects 11. The list of pattern defects 11 thus prepared is sentto the general control part 110. In the general control part 110,feature quantity data of each pattern defect 11 is taken out of thecandidate defect memory part 41. A pattern defect 11 located in the maskregion 42, which has been registered in a recipe, is flagged as a maskeddefect 43 (feature quantity data thereof is flagged). After completionof inspection of the entire region of interest, the inspection defectcheck screen shown in FIG. 15 is opened.

The inspection defect check screen comprises a defect display editingpart 150 for displaying feature quantity data of defects and editingclassification thereof, a map display part 55 in which a currentposition indicator 59 indicating the current position and class codesymbols of pattern defects 11 are displayed on a layout of the wafer 31,an image display part 56 in which an image taken at the current positionis displayed, a display changeover button 151 for turning on/off maskeddefects 43, and an inspection end button 144 for indicating the end ofinspection.

The user sets the mouse operation command button 140 to the selectionmode, and then clicks any pattern defect 11 indicated on the map displaypart 55. Thus, an image of the pattern defect 11 is presented on theimage display part 56, and feature quantity data thereof is presented onthe defect display editing part 150. On the defect display editing part150, the pattern defect 11 is subjected to classification according tothe image and feature quantity data thereof, i.e., a class code isassigned to the feature quantity data of the pattern defect 11. Usingthe display changeover button 151, the user can turn on/off maskeddefects 43 to check for any pattern defect in the mask region 41. Toterminate the inspection defect check session nentioned above, the userpresses the inspection end button 144. Each classified pattern defect 11and feature quantity data thereof are stored into memory means (notshown) in the general control part 110, and also delivered to externalmemory means (not shown) through a communication line (not shown) or toother inspection/observation means (not shown). Then, control isreturned to the initial screen.

According to one aspect of the first preferred embodiment, the entiresurface of each wafer can be inspected using a SEM image thereof withoutregard to pattern defects in the mask region 42, i.e., true patterndefects 57 alone can be indicated to the user for easy identificationthereof.

Further, according to another aspect of the first preferred embodiment,it is also possible to display masked defects in the mask region 42.Therefore, in cases where rough patterning is used to form a redundantpower wiring layer, the degree of roughness in patterning can beexamined by turning on/off the masked defects.

Still further, according to another aspect of the first preferredembodiment, the mask region 42 can be set so as to mask false defectswhich have been identified under actual inspection conditions. It istherefore possible for the user to define proper masking.

Furthermore, according to another aspect of the first preferredembodiment, a different mask region 42 can be created additionally.Therefore, in cases where masking has been defined using an objectcontaining a small degree of random variation, the user can set up a newmask region additionally for providing proper masking as required.

In a first nodified form of the first preferred embodiment, mask regionmanagement may be implemented in a part of image processing functionhardware, instead of using the general control part that is a computersystem. In this modified arrangement, essentially the same functionalityis provided. Since the number of detectable defects is limited in termsof output capacity, this limitation can be removed by using imageprocessing function hardware for mask region management.

In a second modified form of the first preferred embodiment, pluralkinds of mask regions may be set up while only one kind of mask regionhas been treated in the forgoing description. In this modifiedarrangement, false defects due to plural kinds of causes can beclassified for defect data management. By turning on/off indications offalse defects according to each kind of cause, the user can check theconditions thereof. Thus, it is possible for the user to preclude onlymininun false defects for carrying out proper inspection.

In a third modified form of the first preferred embodiment, a maskregion on the mask region setting screen may be automatically defined asa rectangular region having a size approximately two tines as large asthe projection length of any false defect not to be detected. By mergingneighboring mask regions, a mask region is determined using data ofpattern defects classified without intervention of the user. In thismodified arrangement, a flask region can be generated precisely throughautomatic operation. For example, masking at hundreds of points can beprovided automatically so as to allow for easy identification. As afurther modified form of this nodification, there may be provided anarrangement in which an automatically determined mask region can beredefined or edited.

In a fourth modified form of the first preferred embodiment, a maskregion may be determined using design data in inspection of roughpatterning for power wiring, ion implantation, or the like. In thismodified arrangement, the user can set up a mask region for each kind offalse defect while saving the time of input.

In a fifth modified form of the first preferred embodiment, patterndefects are indicated on layout information at a networked CAD displayterminal instead of being indicated on layout information stored in theinspection apparatus. In this modified arrangement, possible defects oneach layer in rough patterning and fine patterning can be identifiedwith ease.

Embodiment 2

A second preferred embodiment of the present invention will bedescribed. FIG. 16 shows an example of the configuration of anelectron-beam pattern inspection apparatus according to the secondpreferred embodiment of the present invention. The electron-beam patterninspection apparatus comprises an electron optical system including: anelectron source 1, for emitting an electron beam 2 from an electron gunin which the electron beam 2 from the electron source 1 is extracted andaccelerated by an electrode to produce a virtual electron source at apredetermined point through an electrostatic or magnetic fieldsuperimposing lens; a condenser lens 60 for converging the electron beam2 from the virtual electron source at a predetermined convergence point;a blanking plate 63 which is equipped in the vicinity of the convergencepoint of the electron beam 2 for turning on/off the electron beam 2; adeflector 105 for deflecting the electron beam 2 in the X and Ydirections; and an objective lens 4 for converging the electron beam 2onto an object substrate.

Further, the electron-beam pattern inspection apparatus comprises aspecimen chamber 107 in which the object substrate (wafer 31) is held ina vacuum; a stage 6 where the wafer 31 is mounted and to which aretarding voltage 108 is applied for enabling detection of an image atan arbitrary position; and a detector 8 for detecting secondaryelectrons 7 or the like produced from the object substrate to output adetected analog signal. An A/D converter 9 is provided for convertingthe detected analog signal into a digital image, which is stored in amemory 109 for storing digital image data, and an image processorcircuit 202 compares the converted digital image with a referencedigital image stored in the memory 109 and identifies a difference,found in the comparison by changing an image processing condition 201for each image processing region 200, as a pattern defect 11. A generalcontrol part 110 is provided, in which feature quantity data of eachpattern defect 11, such as coordinate data, projection length data andshape data, is handled (control lines from the general control part 110are not shown in FIG. 16); and an operation display 45 is provided onwhich data of pattern defects 11 is displayed, an image of a selectedpattern defect 11 is displayed, and each image processing region 200 isdisplayed or edited.

Still further, the electron-beam pattern inspection apparatus comprisesa keyboard, a mouse and a knob (not shown) for operation and control; aZ sensor 113 for measuring the height level of each wafer 31 to maintaina focal point of a detected digital image through control of a currentapplied to the objective lens by adding an offset 112; a loader (notshown) for loading the wafer 31 from its cassette 114 to the specimenchamber 107 and unloading the wafer 31 from the specimen chamber 107 tothe cassette 114; an orientation flat detector (not shown) forpositioning the wafer 31 according to the circumferential shape of thewafer 31; an optical microscope 118 for allowing observation of apattern on the wafer 31; and a standard specimen 119 which is set on thestage 6.

Operations in the second preferred embodiment include a conditioningoperation, in which an image processing region 200 and an imageprocessing condition 201 thereof are set up, and an inspectionoperation, in which pattern defects 11 are detected.

In the conditioning operation, the user opens the startup screen shownin FIG. 9 on the operation display 45. On a slot selection part 130 ofthe startup screen, the user selects a code number of a slot where thewafer 31 to be inspected is contained. Then, on a recipe selection part131, the user specifies a product type of the wafer 31 and a processstep thereof, and the user presses a recipe creation start button 132for starting the conditioning operation. The conditioning operationincludes contrast setting for the electron optical system, patternlayout setting for the wafer 31, pattern positioning alignment for thewafer 31, calibration in which a signal level of the wafer 31 is checkedat a position were the signal level is indicated accurately, inspectioncondition setting image processing region setting for specifying animage processing region 200 and an image processing condition 201thereof, and setup condition check in trial inspection. The contrastsetting, image processing region setting, and trial inspection, whichform essential parts of the present invention, will now be described.

The general control part 110 provides operational instructions to eachpart in the following manner. First, the general control part 110 issuesan operational instruction to the loader (not shown) so that the loadertakes the wafer 31 out of the cassette 114. Then, through the use of theorientation flat detector (not shown), the circumferential shape of thewafer 31 is checked, and the wafer 31 is positioned according to theresult of this check. The wafer 31 is then mounted on the stage 6, andthe specimen chamber 107 is evacuated. Simultaneously, the electronoptical system and the retarding voltage 108 are conditioned. A voltageis applied to the blanking plate 63 to turn off the electron beam 2. Thestage 6 is moved so that the standard specimen 119 can be imaged, and anoutput of the Z sensor 113 is made effective. While a focal point of theelectron beam 2 is maintained at a position corresponding to “a valuedetected by the Z sensor 113+an offset 112”, raster scanning isperformed by the deflector 105. In synchronization with this rasterscanning, the voltage applied to the blanking plate 63 is turned off sothat the wafer 31 is irradiated with the electron beam 2 as required.Backscattered, electrons or secondary electrons produced from the wafer31 are detected by the detector 8, which then outputs a detected analogsignal. Through the A/D converter 9, the detected analog signal isconverted into a digital image. By changing the offset 112, a pluralityof digital images are detected, and in the general control part 110, anoptimum offset for maximizing the sum of image differential values isdetermined. The optimum offset 111 thus determined is set up as thecurrent offset value.

After the optimum offset is established, the output of the Z sensor 113is made ineffective and a screen transition is made to a contrastadjustment screen, such as shown in FIG. 10. The contrast adjustmentscreen comprises: a map display part 55 having a map display area, abutton for controlling display of the entire wafer or die map, and amouse operation command button 140 for controlling position movement oritem selection by the use of the mouse 121 (not shown); an image displaypart 56 having an image display area and an image changeover button 141for setting an image magnification, selecting an optical micrographimage attained through the optical microscope 118 or a SEM imageattained through the electron optical system, and specifying a kind ofimage; a recipe creation item selection button 142; a recipe creationend button 133; and a recipe save button 134. On the contrast adjustmentscreen, the user sets the mouse operation command button 140 to amovement mode, and performs movement on the map by clicking the mouse toview an image at the current position on the image display part. Then,the user assigns an adjustment item of the electron optical system tothe knob, and adjusts each part of the electron optical system to attainproper contrast.

The recipe creation end button 133 is used for terminating recipecreation; the recipe save button 134 is used for saving recipe conditiondata; and the recipe creation item selection button 142 is used forsetting another condition and issuing an instruction for screentransition. These buttons are available on all the screens. To open atrial inspection initial screen, such as shown in FIG. 11, the user setsthe recipe creation item selection button 142 to a trial inspectionitem.

The trial inspection initial screen comprises a map display part 55, arecipe creation end button 133, a recipe save button 134, a recipecreation item selection button 142, an inspection start button 143, andan inspection end button 144. The user sets the mouse operation commandbitten 140 to a selection mode. Then, by clicking a die on the mapdisplay part 55, the user can select/deselect a die for trialinspection. Each die can thus be selected for trial inspection. Afterselecting any die for trail inspection, the user presses the inspectionstart button 143 to start trial inspection. When trial inspection isstarted, the stage 6 is driven for movement to a scanning start positionof the region to be inspected on the wafer 31 mounted thereon.

A pre-measured offset value inherent in the wafer 31 is added to theoffset 112, and the Z sensor 113 is made effective. Then, along thescanning line 33 shown in FIG. 3, the stage 6 is scanned in the Ydirection. In synchronization with this stage scanning, the deflector105 is scanned in the X direction. During a period of effectivescanning, a voltage to the blanking plate 63 is turned off to let theelectron beam 2 fall on the wafer 31, for scanning the surface thereof.Backscattered electrons or secondary electrons produced from the wafer31 are detected by the detector 8, and through the A/D converter 9, adigital image of the stripe region 34 is attained. The digital imagethus attained is stored into the memory 109. After completion of thescanning operation of the stage 6, the Z sensor 113 is made ineffective.The entire region of interest can be inspected by repeating stagescanning. In cases where the entire surface of the wafer 31 isinspected, the scanning sequence shown in FIG. 12 is adopted.

When the detection position A 35 is selected in the image processorcircuit 202, an image attained at the detection position A 35 iscompared with an image attained at the detection position B 36, whichhas been stored in the memory 109. If any difference is found incomparison, the difference is extracted as a pattern defect 11 toprepare a list of pattern defects 11. The list of pattern defects 11thus prepared is sent to the general control part 110. After completionof inspection of the entire region of interest, the user opens a trialinspection defect check screen, such as shown in FIG. 13.

The trial inspection defect check screen comprises a defect displayediting part 150 for displaying feature quantity data of defects andediting classification thereof, a map display part 55 in which a currentposition indicator 59 indicating the current position and class codesymbols of pattern defects 11 are displayed on a layout of the wafer 31,an image display part 56 in which an image taken at the current positionis displayed, a display changeover button 151 for turning on/off maskeddefects 43, and other buttons which have already been described.

The user sets the mouse operation command button 140 to the selectionmode, and then clicks any pattern defect 11 indicated on the map displaypart 55. Thus, an image of the pattern defect 11 is presented on theimage display part 56, and feature quantity data thereof is presented onthe defect display editing part 150. On the defect display editing part150, the pattern defect 11 is subjected to classification according tothe image and feature quantity data thereof, i.e., a class code isassigned to the feature quantity data of the pattern defect 11. At thisstep, if it is desired to treat the pattern defect 11 as a maskeddefect, a particular class code is assigned thereto. Thus, it can beidentified as a masked defect on the map display part 55. Aftercompletion of the defect classification, the user makes a transition toan image processing region setting screen shown in FIG. 17 by using therecipe creation item selection button, or the user returns to the trialinspection initial screen by pressing the inspection end button.

The image processing region setting screen comprises a map display part55 in which a current position indicator 59 indicating the currentposition, class code symbols of pattern defects 11, and an imageprocessing region 200 are displayed on a layout of the wafer 31; animage display part 56 in which an image taken at the current position isdisplayed; a defect redisplay button 207 for defect indication based onfeature quantity image data of each pattern defect 11; a new regionbutton 160 for creating a new region; a completion button 161 forindicating the end of creation of a new region, and other buttons whichhave already described. Note that the map display part 55 presents theentire die region. The current position indicator 59 and pattern defects11 in the entire die region are indicated in representation of on-diecoordinates. The user sets the mouse operation command button 140 to themovement mode, and then clicks in the vicinity of a class code of anydefect corresponding to the image processing condition 201 to be changedfor making movement thereto. Thus, an image of the defect of interest ispresented on the image display part 56.

If the user judges that the image processing condition 201 should bechanged, the user presses the new creation button 160 to select a regioncreation mode. In this mode, the user defines a region by clicking atthe upper left corner and the lower right corner thereof on the imagedisplay part, and the user provides a correspondence between an imageprocessing condition number 206 of the region and a class code.Reference is made to the feature quantity image data 203 of a patterndefect 11 having the class code which corresponds to the imageprocessing condition number, and the image processing condition 201 isset up for the image processing condition number so that all-defectsdetection will not be made by the image processor circuit or software inthe general control part (computer). As required, the user adjusts theimage processing condition 201 manually. Using a special conditionon/off button 208, the user specifies whether or not the imageprocessing condition 201 is to be applied at the time of inspection. Onthe map display part 55, the defined region is indicated as an imageprocessing region 200 together with the image processing conditionnumber. After creating the image processing region 200 as mentionedabove, the user presses the defect redisplay button 207 to confirm thateach pattern defect 11 belonging to the image processing region 200 isnot indicated. When the image processing region 200 is set up asrequired, the user presses the recipe save bitten 134. Thus, dataregarding the image processing region 200, the image processingcondition number corresponding thereto, and the image processingcondition 201 for each image processing number are saved in a recipe.

After saving the above data, the user presses the ccnpletion button 161to return to the trial inspection defect check screen. Further, on thetrial inspection defect check screen, the user presses the inspectionend button 144 to return to the trial inspection initial screen. Then,it is possible for the user to select another die for trial inspection.For confirming and terminating the above-mentioned recipe creationsession, the user presses the recipe creation end button 133. Uponcompletion of the recipe creation, the wafer 31 is unloaded back to thecassette 114.

The following describes the inspection operation. In the inspectionoperation, the user opens the startup screen shown in FIG. 9 on theoperation display 45. On the slot selection part 130 of the startupscreen, the user selects a code number of a slot where the wafer 31 tobe inspected is contained. Then, on the recipe selection part 131, theuser specifies a product type of the wafer 31 and a process stepthereof, and the user presses an inspection start button 330 forstarting the inspection operation. After wafer loading, alignnant andcalibration are performed, inspection processing is carried out. Then,defect check and defect data output are performed, and wafer unloadingis carried out at the end of inspection. The inspection processing anddefect check, which form essential parts of the present invention, willnow be described.

When the user presses the inspection start button 330 to indicate thestart of inspection, the stage 6 is driven for movement to a scanningstart position of the region to be inspected on the wafer 31 mountedthereon. A pre-measured offset value inherent in the wafer 31 is addedto the offset 112, and the Z sensor 113 is made effective. Then, alongthe scanning line 33 shown in FIG. 3, the stage 6 is scanned in the Ydirection. In synchronization of this stage scanning, the deflector 105is scanned in the X direction. During a period of effective scanning, avoltage to the blanking plate 63 is tuned off to let the electron beam 2fall en the wafer 31 for scanning the surface thereof. Backscatteredelectrons or secondary electrons produced from the wafer 31 are detectedby the detector 8, and through the A/D converter 9, a digital image ofthe stripe region 34 is attained. The digital image thus attained isstored into the memory 109. After completion of the scanning operationof the stage 6, the Z sensor 113 is made ineffective. The entire regionof interest can be inspected by repeating stage scanning. In cases wherethe entire surface of the wafer 31 is to be inspected, the scanningsequence shown in FIG. 12 is adopted.

When the detection position A 35 is selected in the image processorcircuit 202, an image attained at the detection position A 35 isccnpared with an image attained at the detection position B 36, whichhas been stored in the memory 109. If any difference is found incomparison, the difference is extracted as a pattern defect 11 toprepare a list of pattern defects 11. The list of pattern defects 11thus prepared is sent to the general control part 110. After ccupletionof inspection of the entire region of interest, an inspection defectcheck screen, such as shown in FIG. 15, is opened.

The inspection defect check screen comprises a defect display editingpart 150 for displaying feature quantity data of defects and editingclassification thereof, a map display part 55 in which a currentposition indicator 59 indicating the current position and class codesymbols of pattern defects 11 are displayed on a layout of the wafer 31,an image display part 56 in which an image taken at the current positionis displayed, a display changeover button 151 for turning on/off maskeddefects 43, and an inspection end button 144 for indicating the end ofinspection. The user sets the mouse operation command button 140 to theselection mode, and then clicks any pattern defect 11 indicated on themap display part 55. Thus, an image of the pattern defect 11 ispresented on the image display part 56, and feature quantity datathereof is presented on the defect display editing part 150. On thedefect display editing part 150, the pattern defect 11 is subjected toclassification according to the image and feature quantity data thereof,i.e., a class code is assigeed to the feature quantity data of thepattern defect 11.

A display changeover button 209 is provided for turning on/off thedisplay for the image processing condition 201 in the image processingregion 200. With this button, the user can perform a display changeoveraccording to whether or not the image processing condition 201 isapplied to each pattern defect 11 in the image processing regien 200.If, by using the special condition on/off button 208, the user hasspecified that the image processing condition 201 is to be applied atthe time of inspection, a display changeover with the image displaychangeover button 209 is not available since the image processingcondition 201 is already applied. To terminate the inspection defectcheck session mentioned above, the user presses the inspection endbutton 144. Each classified pattern defect 11 and feature quantity datathereof are stored into memory means (not shown) in the general controlpart 110, and they are also delivered to external memory means (notshown) through a communication line (not shown) or to otherinspection/observation means (not shown). Then, control is returned tothe initial screen.

According to one aspect of the second preferred embodiment, the entiresurface of each wafer can be inspected using a SEM image thereof withoutregard to pattern defects in the image processing region 200, i.e., truepattern defects 57 only can be indicated to the user for easyidentification thereof.

Further, according to another aspect of the second preferred embodiment,it is possible to display defects in the image processing region 200.Therefore, in cases where rough patterning is used to form a redundantpower wiring layer, the degree of roughness in patterning can beexauiined by means of display changeover.

Still further, according to another aspect of the second preferredembodiment, an image processing condition can be set so that falsedefects identified under actual inspection conditions will not bedetected. It is therefore possible for the user to specify a thresholdproperly just as required.

Furthermore, according to another aspect of the second preferredembodiment, a different image processing region 200 can be createdadditionally. Therefore, in cases where the image processing condition201 has been defined using an object containing a small degree of randomvariation, the user can set up a new image processing regionadditionally to provide proper conditioning for image processing asrequired.

Moreover, according to another aspect of the second preferredembodiment, the image processing condition 201 is adjustable withoutcompletely deleting data of pattern defects 11 an the image processingregion 200. Therefore, the user can adjust the image processingcondition 201 so that false defect detection will be prevented asrequired while possible defects remain inspectable.

Still further, according to another aspect of the second preferredembodiment, in cases where, by using the special condition on/off button208, the user has specified that the image processing condition 201 isnot to be applied at the time of inspection, it is possible to alter theimage processing region 200 and the image processing condition 201.Therefore, even if it becomes necessary to provide a different imageprocessing condition due to variation in a fabrication process, the userhas only to adjust the image processing condition 201. Thus, inspectioncan be carried out using feature quantity data acquired already.

Embodiment 3

A third preferred embodiment of the present invention will now bedescribed.

FIG. 18 shows an example of the configuration of an electron-beampattern inspection apparatus according to the third preferred embodimentof the present invention. The electron-beam pattern inspection apparatuscomprises an electron optical system including: an electron source 1 foranitting an electron beam 2 in the form of an electron gun in which theelectron beam 2 from the electron source 1 is extracted and acceleratedby an electrode to produce a virtual electron source at a predeterminedpoint through an electrostatic or magnetic field superimposing lens; acondenser lens 60 for converging the electron beam 2 from the virtualelectron source at a predetermined convergence point; a blanking plate63 which is equipped in the vicinity of the convergence point of theelectron beam 2 for turning on/off the electron beam 2; a deflector 105for deflecting the electron beam 2 in the X and Y directions; and anobjective lens 4 for converging the electron beam 2 onto an objectsubstrate 5.

Further, the electron-beam pattern inspection apparatus comprises: aspecimen chamber 107 in which the object substrate (wafer 31) is held ina vacuum; a stage 6 where the wafer 31 is mounted and to which aretarding voltage 108 is applied for enabling detection of an image atan arbitrary position; and a detector 8 for detecting secondaryelectrons 7 or the like produced from the object substrate to output adetected analog signal. An A/D converter 9 is provided for convertingthe detected analog signal into a digital image, which is stored in amemory 109 for storing digital image data, and an image processorcircuit 10 compares the converted digital image with a reference digitalimage stored in the memory 109 and identifies a difference found in thecomparison as a candidate defect 40. A candidate defect memory part 41is provided for storing feature quantity data 203 of each candidatedefect 40, such as coordinate data, projection length data and shapedata. A feature quantity check part 251 is provided in which featurequantity data 203 of each candidate defect 40 is received from thecandidate defect memory part 41 and it is checked to see whether thecandidate defect 40 meets prespecified feature quantity data 250. Adetail image processing part 252 is provided in which, under an imageprocessing condition 201 specified for each feature quantity data, ajudgnent for determining each pattern defect 11 is formed on thecandidate defect 40 that has proved to meet the prespecified, featurequantity data 250 as determined by the feature quantity data check part251, and a general control part 110 receives data of each pattern defect11 from the detail image processing part 252 (control lines from thegeneral control part 110 are not shown in FIG. 18). An operation display45 is provided on which data of pattern defects 11 is displayed, animage of a selected pattern defect 11 is displayed, and the imageprocessing region 200 is displayed or edited.

Still further, the electron-beam pattern inspection apparatus comprisesa keyboard, a mouse and a knob (not shown) for operathen and control; aZ sensor 113 for measuring the height level of each wafer 31 to maintaina focal point of a detected digital image through control of a currentapplied to the objective lens by adding an offset 112; a loader (notshown) for loading the wafer 31 from its cassette 114 to the specimenchatter 107 and unloading the wafer 31 from the specimen chamber 107 tothe cassette 114; an orientation flat detector (not shown) forpositioning the wafer 31 according to the circumferential shape of thewafer 31; an optical microscope 118 for providing for observation of apattern on the wafer 31; and a standard specimen 119 which is set en thestage 6.

Operations in the third preferred embodiment include a conditioningquestion, in which feature quantity data 250 and an image processingcondition 201 thereof are set up, and an inspection operation, in whichpattern defects 11 are detected.

In the conditioning operation, the user opens the startup seen shown inFIG. 9 on the operathen display 45. On a slot selection part 130 of thestartup screen, the user selects a code number of a slot where the wafer31 to be inspected is contained. Then, on a recipe selection part 131,the user specifies a product type of the wafer 31 and a process stepthereof, and the user presses a recipe creation start button 132 forstarting the conditioning operation. Conditioning operation includescontrast setting for the electron optical system, pattern layout settingfor the wafer 31, pattern positioning alignment for the wafer 31,calibration in which a signal level of the wafer 31 is checked at aposition where the signal level is indicated accurately, inspectioncondition setting, image processing feature quantity data setting forspecifying feature quantity data 250 and an image processing condition201 thereof, and setup condition check in trial inspection. The contrastsetting, image processing feature quantity data setting, and trialinspection, which form essential parts of the present invention, willnow be described.

The general control part 110 provides operational instructions to eachpart in the following manner. First, the general control part 110 issuesan operational instruction to the loader (not shown) so that the loadertakes the wafer 31 out of the cassette 114. Then, through the use of theorientation flat detector (not shown), the circumferential shape of thewafer 31 is checked, and the wafer 31 is positioned according to theresult of this check. The wafer 31 is then mounted on the stage 6, andthe specimen chamber 107 is evacuated. Simultaneously, the electronoptical system 106 and the retarding voltage 108 are conditioned. Avoltage is applied to the blanking plate 63 to turn off the electronbeam 2. The stage 6 is moved so that the standard specimen 119 can beimaged, and an output of the Z sensor 113 is made effective. While afocal point of the electron beam 2 is maintained at a positioncorresponding to “a value detected by the Z sensor 113+an offset 112”,raster scanning is performed by the deflector 105. In synchronizationwith this raster scanning, the voltage applied to the blanking plate 63is turned off so that the wafer 31 is irradiated with the electron beam2 as required.

Backscattered electrons or secondary electrons produced from the wafer31 are detected by the detector 8, which then outpits a detected analogsignal. Through the A/D converter 9, the detected analog signal isconverted into a digital image. By changing the offset 112, a pluralityof digital images are detected, and in the general control part 110, anoptimum offset for maximizing the sun of image differential values isdetermined. The optimum offset thus determined is set up as the currentoffset value. After the optimum offset is established, the output of theZ sensor 113 is made ineffective, and a screen transition is made to acontrast adjustment screen, such as shown in FIG. 10.

The contrast adjustment screen comprises: a map display part 55 having amap display area, a button for controlling display of the entire waferor die, map, and a mouse operation command button 140 for controllingposition movement or item selection by the use of the mouse (not shown);an image display part 56 having an image display area and an imagechangeover button 141 for setting an image magnification, selecting anoptical micrograph image obtained through the optical microscope 118 ora SEM image obtained through the electron optical system, and specifyinga kind of image; a recipe creation item selection button 142; a recipecreation end button 133; and a recipe save button 134.

On the contrast adjustment screen, the user sets the mouse operationcommand button 140 to a movement mode, and performs movement on the mapby clicking the mouse to view an image at the current position on theimage display part. Then, the user assigns an adjustment item of theelectron optical system, to the knob, and adjusts each part of theelectron optical system to attain proper contrast. The recipe creationend button 133 is used for terminating recipe creation; the recipe savebutton 134 is used for saving recipe condition data; and the recipecreation item selection button 142 is used for setting another conditionand issuing an instruction for screen transition. These buttons areavailable on all the screens. To open a trial inspection initial screen,such as shown in FIG. 11, the user sets the recipe creation itemselection button 142 to a trial inspection item.

The trial inspection initial screen comprises a map display part 55, arecipe creation end button 133, a recipe save button 134, a recipecreation item selection button 142, an inspection start button 143, andan inspection end bit ton 144. The user sets the mouse operation commandbutton 140 to a selection mode. Then, by clicking a die on the mapdisplay part 55, the user can select/deselect the die for trialinspection. Each die can thus be selected for trial inspection. Afterselecting any die for trial inspection, the user presses the inspectionstart button 143 to start trial inspection. When trial inspection isstarted, the stage 6 is driven for movement to a scanning start positionof the region to be inspected on the wafer 31 mounted thereon. Apre-measured offset value inherent in the wafer 31 is abed to the offset112, and the Z sensor 113 is made effective. Then, along the scanningline 33 shown in FIG. 3, the stage 6 is scanned in the Y direction. Insynchronization with this stage scanning, the deflector 105 is scannedin the X direction. During a period of effective scanning, a voltage tothe blanking plate 63 is turned off to let the electron beam 2 fail onthe wafer 31 for scanning the surface thereof.

Backscattered electrons or secondary electrons produced from the wafer31 are detected by the detector 8, and through the A/D converter 9, adigital image of the stripe region 34 is obtained. The digital imagethus obtained is stored into the memory 109. After completion of thescanning operation of the stage 6, the Z sensor 113 is made ineffective.The entire region of interest can be inspected by repeating stagescanning. In cases where the entire surface, of the wafer 31 isinspected, a scanning sequence shown in FIG. 12 is carried out.

When the detection position A 35 is selected in the image processorcircuit 10, an image obtained at the detection position A 35 is comparedwith an image obtained at the detection position B 36, which has beenstored in the memory 109. If any difference is found in comparison, thedifference is extracted as a candidate defect 40 and feature quantitydata of the candidate defect 40 is stored into the candidate defectmemory part 41. Simultaneously at the feature quantity data check part251, it is checked to see whether the candidate defect 40 meetsprespecified feature quantity data 250 or not. If the candidate defect40 meets the prespecified feature quantity data 250, data of thecandidate defect 40 is sent to the detail image processing part 252.Then, in the detail image processing part 252, image processing iscarried out under an image processing condition 201 determined for eachprespecified feature quantity data to check whether the candidate defect40 is a pattern defect 11 or not. If the candidate defect 40 isrecognized as a pattern defect 11, an identification, code thereofstored in the candidate defect memory part 41 is sent to the generalcontrol part 110. After completion of inspection of the entire region ofinterest, a defect check screen, such as shown in FIG. 19, is opened.

The defect check screen comprises a defect display editing part 150 fordisplaying feature quantity data of defects and editing classificationthereof; a map display part 55, in which a current position indicator 59indicating the current position and class code symbols of patterndefects 11 are displayed on a layout of the wafer 31; an image displaypart 56, in which an image taken at the current position is displayed; areal/memory image display changeover button 255 for effecting achangeover between a real, image display and a memory image display, andother buttons which have already been described. The user sets the mouseoperation command button 140 to the selection mode, and then clicks anypattern defect 11 indicated on the map display part 55. Then, if a realimage selection has been made with the real/memory image changeoverbutton 255, a coordinate location of the pattern defect 11 is taken forimage acquisition. If a memory image selection has been made with thereal/memory image changeover button 255, an image of the pattern defect11 is presented on the image display part 56, and feature quantity datathereof is presented on the defect display editing part 150. On thedefect display editing part 150, the pattern defect 11 is subjected toclassification according to the image and feature quantity data thereof,i.e., a class code is assigned to the feature quantity data of thepattern defect 11. At this step, if it is desired to treat the pattendefect 11 as a defect not to be detected 58, a particular class code isassigned thereto. Thus, it can be identified as a defect not to bedetected on the map display part 55. After completion of the defectclassification, the user makes a transition to an image processingfeature quantity data setting screen, as shown in FIG. 20, using therecipe creation item selection button, or the user returns to the trialinspection initial screen by pressing the inspection end button.

The image processing feature quantity data setting screen comprises aclass code specifying part 262 for specifying a class code of interest261; a defect selection part 263 for selecting defects having the classcode of interest in succession; a feature quantity data specifying part264 for specifying feature quantity data of each selected defect andfeature quantity data 250 used as a selection criterion; a map displaypart 55; an image display part 56, in which an image of each defect 11is displayed; an image processing condition setting part 265 for settingup an image processing condition number corresponding to an imageprocessing condition 201 to be applied to an image selected by thefeature quantity data specifying part 264; a defect redisplay button 207for indicating on the map display part 55 the result of judgmentattained after an evaluation image processing part 252 checks to seewhether or not an image in the candidate defect memory part 41 is apattern defect 11; a new feature quantity data creation button 266 forcreating a new image processing condition number corresponding toprespecified feature quantity data 250; a completion button 161 forindicating the end of creation of new feature quantity data; and otherbuttons which have already described. The recipe save button 134 isprovided for saving data in a recipe.

After saving the data, the user presses the completion button 161 toreturn to the trial inspection defect check screen. Further, en thetrial inspection defect check screen, the user presses the inspectionend button 144 to return to the trial inspection initial screen. Then,it is possible for the user to select another die for trial inspection.For confirming and terminating the above-mentioned session, the userpresses the recipe creation end button 133. Upon completion of therecipe creation, the wafer 31 is unloaded back to the cassette 114.

The inspection operation will now be described. In the inspectionoperation, the user opens the startup screen shown in FIG. 9 on theoperation display 45. On the slot selection part 130 of the startupscreen, the user selects a code number of a slot where the wafer 31 tobe inspected is contained. Then, on the recipe selection part 131, theuser specifies a product type of the wafer 31 and a process stepthereof, and the user presses an inspection start button 330 forstarting the inspection operation. After wafer loading, alignment andcalibration are performed, inspection processing is carried out. Then,defect check and defect data output are performed, and wafer unloadingis carried out at the end of inspection. The inspection processing anddefect check, which form essential parts of the present invention, willnow be described.

When the user presses the inspection start button 330 to indicate thestart of inspection, the stage 6 is driven for movement to a scanningstart position of the region to be inspected on the wafer 31 mountedthereon. A pre-measured offset value inherent in the wafer 31 is addedto the offset 112, and the Z sensor 113 is made effective. Then, alongthe scanning line 33 shown in FIG. 3, the stage 6 is scanned in the Ydirection. In synchronization of this stage scanning, the deflector 105is scanned in the X direction. During, a period of effective scanning, avoltage to the blanking plate 63 is turned off to let the electron beam2 fall on the wafer 31 for scanning the surface thereof. Backscatteredelectrons or secondary electrons produced from the wafer 31 are detectedby the detector 8, and through the A/D converter 9, a digital image ofthe stripe region 34 is obtained. The digital image thus attained isstored into the memory 109. After completion of the scanning operationof the stage 6, the Z sensor 113 is made ineffective. The entire regionof interest can be inspected by repeating stage scanning. In cases wherethe entire surface of the wafer 31 is inspected, the scanning sequenceshown in FIG. 12 is employed.

When the detection position A 35 is selected in the image processorcircuit 202, an image obtained at the detection position A 35 iscompared with an image obtained at the detection position B 36, whichhas been stored in the memory 109. If any difference is found incomparison, the difference is extracted as a candidate defect 40 andstored in the candidate defect memory part 41. Further, the featurequantity data check part 251 selects a candidate defect meeting theprespecified feature quantity data, and using an image processingcondition 201 determined by an image processing condition numbercorresponding to the prespecified feature quantity data, the detailimage processing part 252 formed a judgment on whether or not thecandidate defect 40 is a pattern defect 11 so as to prepare a list ofpattern defects 11. The list of pattern defects 11 thus prepared is sentto the general control part 110. After completion of inspection of theentire region of interest, a defect check screen such as shown in FIG.15 is opened.

The defect check screen comprises a defect display editing part 150 fordisplaying feature quantity, data of defects and editing classificationthereof; a map display part 55, in which a current position indicator 59indicating the current position and class code symbols of patterndefects 11 are displayed on a layout of the wafer 31; an image displaypart 56 in which an image taken at the current position is displayed; adisplay changeover button 151 for turning on/off candidate defects 41with pattern defects 11 indicated; and an inspection end bit ten 144 forindicating the end of inspection.

The user sets the mouse operation command button 140 to the selectionmode, and then clicks any pattern defect 11 indicated on the map displaypart 55. Thus, an image of the pattern defect 11 is presented on theimage display part 56, and feature quantity data thereof is presented onthe defect display editing part 150. On the defect display editing part150, the pattern defect 11 is subjected to classification according tothe image and feature quantity data thereof, i.e., a class code isassigned to the feature quantity data of the pattern defect 11. Adisplay changeover button 209 is provided for turning on/off the displayfor the image processing condition 201 in the image processing region200. With this button, the user can perform a display changeoveraccording to whether or not the image processing condition 201 isapplied to each pattern defect 11 in the image processing region 200.If, by using the special condition on/off button 208, the user hasspecified that the image processing condition 201 is to be applied atthe time of inspection, a display changeover with the image displaychangeover button 209, is not available, since the image processingcondition 201 is already applied. To term mate the inspection defectcheck session mentioned above, the user presses the inspection endbutton 144. Each classified pattern defect 11 and feature quantity datathereof are stored into memory means (not shown) in the general controlpart 110, and they are also delivered to external memory means (notshown) through a communication line (not shown) or to otherinspection/observation means (not shown). Then, control is returned tothe initial screen.

According to one aspect of the third preferred embodiment, the entiresurface of each wafer can be inspected using a SEM image thereof todetect true pattern defects 57 only. Thus, the user can identify thetrue pattern defects 57 with ease.

Further, according to another aspect of the third preferred embodiment,in cases where rough patterning is used to form a redundant power wiringlayer or a pattern edge, the degree of roughness in patterning can beexamined by means of display changeover.

Still further, according to another aspect of the third preferredembodiment, an image processing condition can be set so that falsedefects identified under actual inspection conditions will not bedetected. It is therefore possible for the user to specify a thresholdproperly just as required.

Furthermore, according to another aspect of the third preferredembodiment, the image processing condition 201 is adjustable withoutcompletely deleting data of pattern defects 11 in the image processingregion 200. Therefore, the user can adjust the image processingcondition 201 so that false defect detection will be prevented asrequired while possible defects remain inspectable.

As set forth hereinabove, and according to the present invention, theuser can set up a non-inspection region that is effective for a devicehaving a complex, large pattern area to be inspected, such as a wafer.Further, in cases where a considerable difference is found incomparative inspection of detected images, even if the difference is notactually a defect, the present invention makes it possible to avoidfalse defect detection while carrying out detection of minusculedefects.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The presentembodiments are therefore to be considered in all respects asillustrative and not restrictive, the scope of the invention beingindicated by the appended claims rather than by the foregoingdescription and all changes which care within the meaning and range ofequivalency of the claims are therefore intended to be embraced therein.

1. A pattern inspection method comprising: conditioning for setting up amask region in a specimen to be inspected; and inspecting for detectingdefects on the specimen and outputting information of defects which aredetected in areas other than said mask region on said specimen, whereinsaid inspecting operation is applied to plural specimens one afteranother, and the conditioning operation includes: obtaining a digitalimage of a test inspection area of the specimen for testing throughmicroscopic observation thereof; detecting defect candidates of apattern formed in said test inspection area of said specimen for testingby comparing said digital image with a reference image stored in amemory; displaying on a display screen, positional distribution data ofthe defects detected in said test inspection area of said specimen fortesting in a map format; defining said mask region in said testinspection area on said display screen in which said detected defectsare displayed in a map format; and saving a data of said defined maskregion in a recipe to be used in subsequent iterations of the inspectionoperation.
 2. A pattern inspection method as claimed in claim 1, whereinthe mask region is a region which has been inputted using the digitalimage attained through microscopic observation of the specimen.
 3. Apattern inspection method comprising: conditioning for setting up a maskregion in a specimen to be inspected; and inspecting for detectingdefects on a specimen and outputting information of defects which aredetected in areas other than said mask region on said specimen, whereinsaid inspecting operation is applied to plural specimens one afteranother, and the conditioning operation includes: inspecting a testinspection area of a specimen for testing under a trial inspectioncondition and detecting defect candidates; classifying said detecteddefect candidates by using information of image and feature quantity ofsaid defect candidates; displaying said defect candidates detected insaid test inspection area under said trial inspection condition on adisplay screen in a map format together with information obtained at theclassifying operation; defining said mask region in said test inspectionarea on said display screen in which said detected defects are displayedin a map format; and saving a data of said defined mask region in arecipe to be used in subsequent iterations of the inspection operation.4. A pattern inspection method as claimed in claim 3, wherein the maskregion is a region which has been inputted using the digital imageobtained through microscopic observation of the specimen.
 5. A patterninspection method comprising: conditioning for setting up a mask regionin a specimen; and inspecting for detecting defects on a specimen andoutputting information of defects which are detected in areas other thansaid mask region on said specimen, wherein said inspecting operation isapplied to plural specimens one after another, and the conditioningoperation includes: designating one of die area among plural die areasformed on a specimen or the conditioning operation; obtaining a digitalimage of said designated die area through microscopic observationthereof; detecting defect candidates of a pattern formed in saiddesignated die area by comparing said digital image with a referenceimage stored in a memory; displaying on a display screen data of thedefect candidates detected in the detecting operation includingpositional information in said designated die area in a map format;defining on said display screen a mask region in said map; and saving adata of said defined mask region in a recipe to be used in subsequentiterations of the inspecting operation.
 6. A pattern inspection methodas claimed in claim 5, wherein feature quantity data of each defectcontains at least one kind of data including defect position data,projection length data, area data, and shape data.
 7. A patterninspection method comprising: conditioning for setting up a mask regionin a specimen to be inspected; and inspecting for detecting defects on aspecimen and outputting information of defects which are detected inareas other than said mask region on said specimen, wherein saidinspecting operation is applied to plural specimens one after another,and the conditioning operation includes: designating one of die areaamong plural die areas formed on specimen for the conditioningoperation; inspecting said designated die area under a trial inspectioncondition and detecting defect candidates; classifying said detecteddefect candidates by using information of image and feature quantity ofsaid defect candidates; displaying said defect candidates detected insaid test inspection area under said trial inspection condition on adisplay screen in a map format together with information obtained at theclassifying operation; designating a defect class to be masked amongsaid classified defect candidates; displaying defect candidates whichbelong to said designated defect class on said screen; defining saidmask region in said designated die area on said display screen in whichsaid defect candidates belonging to said designated defect class aredisplayed in a map format; and saving a data of said mask region definedat the defining operation in a recipe to be used in subsequentiterations of the inspecting operation.
 8. A pattern inspection methodas claimed in claim 7, wherein the class data of each of the classifieddefects is displayed on the display screen together with an imagethereof.
 9. A pattern inspection method as claimed in claim 7, wherein adigital image of each of the detected candidate defects is stored, and ajudgment for extracting defects from the detected candidate defects iscarried out by using the stored digital image of each of the detectedcandidate defects.
 10. A pattern inspection method as claimed in claim7, wherein the feature quantity of each of the extracted defects isdisplayed on a CAD terminal.
 11. A pattern inspection method as claimedin claim 7, wherein the feature quantity of each of the extracteddefects is displayed or printed together with CAD data thereof.
 12. Apattern inspection method as claimed in claim 1, wherein the defining iseffected by a human user manually designating the mask region in thetest inspection area on the display screen.
 13. A pattern inspectionmethod as claimed in claim 3, wherein the defining is effected by ahuman user manually designating the mask region in the test inspectionarea on the display screen.
 14. A pattern inspection method as claimedin claim 5, wherein the defining is effected by a human user manuallydesignating the mask region in the test inspection area on the displayscreen.
 15. A pattern inspection method as claimed in claim 7, whereinthe defining is effected by a human user manually designating the maskregion in the test inspection area on the display screen.